^^mi-donductoi lpioauati, ona. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 rfh45n05, rfh45n06 power mos field-effect transistors n-channel enhancement-mode power field-effect transistors 45 a, 50 v - 60 v rostoni = 0.040 n features: soa is power-dissipation limited nanosecond switching speeds linear transfer characteristics high input impedance majority carrier device high-current, low-inductance package terminal diagram n-channel enhancement mode the rfh45n05 and rfh45n06' are n-channel enhance- ment-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. these types can be operated directly from integrated circuits. the rfh-types are supplied in the jedec to-218ac plastic package. terminal designations rfh45n05 rfh45n06 jedec to 218ac maximum ratings, absolute-maximum values (to = 25" c): drain-source voltage vdss drain-gate voltage. r,. " 1 mo voob gate-source voltage vos drain current. rms continuous id pulfisd idu power dissipation @ tc = 25'c pt derate above tc - 25 c rfh45nos RFH4SN06 so so 20 45 100 150 1.2 60 60 v v v a a w w/'c operating and storage temperature. .t..t., .-55(0+150. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
rfh45n05, rfh45n06 electrical characteristics, at case temperature (tc) = 25c unless otherwise speciried. characteristic drain-source breakdown voltage gate threshold voltage zero gate voltage drain current gate-source leakage current drain-source on voltage static drain-source on resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-ofl delay time fall time thermal resistance junction-to-case symbol bvoss vos(th) loss loss vd8(on)? ros(on)? g>," c,? com c? td(on) t, wolf) t. r?ic test conditions id = 1 ma vos = 0 vas = vds id s 1 ma vds * 40 v vos = 50 v tc"125*c vm = 40 v vos = 50 v vos = 20 v vm = 0 id * 22.5 a vos = 10 v id = 45 a vos = 10 v id = 22.5 a vos = 10 v vos = 10v id =? 22.5 a vos = 25 v vos = 0 v f=1mhz vos * 30 v id = 22.5 a r(w"rRFH4SN06 mln. - max. 1.4 150 (typ.) units v ns ' pulse test: width < 300 //a, duty cycle < 2%.
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